Package structure and method of manufacturing the same

ABSTRACT

Package structure and method of manufacturing the same are provided. The package structure includes a first die, a second die, a first encapsulant, a bridge die, and a second encapsulant. The first encapsulant laterally encapsulates the first die and the second die. The bridge die is electrically connected to the first die and the second die. The second encapsulant is located over the first die, the second die and the first encapsulant, laterally encapsulating the bridge die and filling a space between the bridge die and the first die, between the bridge die and the first encapsulant and between the bridge die and the second die. A material of the second encapsulant is different from a material of the first encapsulant.

BACKGROUND

The semiconductor industry has experienced rapid growth due tocontinuous improvements in the integration density of various electroniccomponents (i.e., transistors, diodes, resistors, capacitors, etc.). Forthe most part, this improvement in integration density has come fromcontinuous reductions in minimum feature size, which allows more of thesmaller components to be integrated into a given area. These smallerelectronic components also demand smaller packages that utilize lessarea than previous packages. Some smaller types of packages forsemiconductor components include quad flat packages (QFPs), pin gridarray (PGA) packages, ball grid array (BGA) packages, flip chips (FC),three-dimensional integrated circuits (3DICs), wafer level packages(WLPs), and package on package (PoP) devices and so on.

Currently, integrated fan-out packages are becoming increasingly popularfor their compactness.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A to FIG. 1J are schematic cross-sectional views illustrating amethod of forming a package structure according to some embodiments ofthe disclosure.

FIG. 2 schematically illustrates flow marks of an encapsulant from a topview according to some embodiments of the disclosure.

FIGS. 3 and 4 are schematic cross-sectional views illustrating packagestructures according to some embodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a second feature over or on a first feature in the description thatfollows may include embodiments in which the second and first featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the second and first features,such that the second and first features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath”, “below”, “lower”,“on”, “above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the FIG.s. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe FIG.s. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

Underfill filling process and molding process are usually used incombination for encapsulating a semiconductor die (especially for aflip-chip die or a bridge die) in conventional packaging process. Forexample, an underfill filling process is firstly performed to form anunderfill layer under the semiconductor die to fill the space betweenthe semiconductor die and another semiconductor device to which thesemiconductor die is connected, and the connectors providing theelectrical connection between the semiconductor die and thesemiconductor device is surrounded and protected by the underfill layer.The semiconductor die may then be grinded to have a reduced thickness bya first grinding process. Thereafter, an over-molding process isperformed to form a molding compound encapsulating the semiconductor dieand the underfill layer, and a second grinding process is performed toremove excess molding compound, so as to expose the semiconductor dieand/or through vias which may be disposed around the semiconductor die.

In the conventional packaging process, underfill filling process andmolding process are separately performed and two grinding processes areneeded to form the encapsulated semiconductor die, which is a complexprocess flow requiring a high manufacturing cost and having a high riskof process control. On the other hand, in the embodiments in whichthrough vias are formed around the die, the underfill layer may flow toreach and nonuniformly contact the through vias, which may negativelyimpact the reliability of the resulted package structure. Currently, asolution to such issue is to define a keep out zone (KoZ) around thesemiconductor die, the keep out zone is a region where no through viasor other components can be disposed within. However, the setting of thekeep out zone would further increase the complexity and the cost of themanufacturing process, and would also increase the size of the resultedpackage. Another challenge with the above packaging process is defininga fine keep out zone and controlling the underfill filling process suchthat the underfill layer would not flow out of the keep out zone toreach the through vias. In other word, the conventional packagingprocess is complex and the cost is high, and the yield (wafer per hour(WPH)) is relatively low.

In various embodiments, the disclosure is directed to provide asemiconductor package and a manufacturing process thereof which needless process steps and lower cost, and there is no need to set a keepout zone around the semiconductor die.

FIG. 1A to FIG. 1L are schematic cross-sectional views illustrating amethod of manufacturing a package structure according to someembodiments of the disclosure.

Referring to FIG. 1A, a carrier 10 is provided. The carrier 10 may be aglass carrier, a ceramic carrier, or the like. A de-bonding layer 11 isformed on the carrier 10 by, for example, a spin coating method. In someembodiments, the de-bonding layer 11 may be formed of an adhesive suchas an Ultra-Violet (UV) glue, a Light-to-Heat Conversion (LTHC) glue, orthe like, or other types of adhesives. The de-bonding layer 11 isdecomposable under the heat of light to thereby release the carrier 10from the overlying structures that will be formed in subsequent steps.

Still referring to FIG. 1A, a plurality of dies 18 are mounted over thecarrier 10 by pick and place processes. In some embodiments, the dies 18are attached side by side to the de-bonding layer 11 over the carrier 10through an adhesive layer (not shown) such as a die attach film (DAF),silver paste, or the like. The dies 18 may respectively be anapplication-specific integrated circuit (ASIC) chip, an analog chip, asensor chip, a wireless and radio frequency chip, a voltage regulatorchip or a memory chip. The dies 18 may be the same types of dies or thedifferent types of dies. In some embodiments, the dies 18 are small diepartitions with different function of a larger single die. It is notedthat, the number of the dies 18 shown in the figures are merely forillustration, and the disclosure is not limited thereto. In someembodiments, the height (i.e. thickness) H1 of the die 18 ranges from600 μm to 700 μm, for example.

In some embodiments, the die 18 includes a substrate 13, a plurality ofpads 14, a passivation layer 15, a plurality of connectors 16 and apassivation layer 17. In some embodiments, the substrate 13 is made ofsilicon or other semiconductor materials. Alternatively or additionally,the substrate 13 includes other elementary semiconductor materials suchas germanium, gallium arsenic, or other suitable semiconductormaterials. In some embodiments, the substrate 13 may further includeother features such as various doped regions, a buried layer, and/or anepitaxy layer. Moreover, in some embodiments, the substrate 13 is madeof an alloy semiconductor such as silicon germanium, silicon germaniumcarbide, gallium arsenic phosphide, or gallium indium phosphide.Furthermore, the substrate 13 may be a semiconductor on insulator suchas silicon on insulator (SOI) or silicon on sapphire.

In some embodiments, a plurality of devices are formed in and/or on thesubstrate 13. In some embodiments, the devices may be active devices,passive devices, or combinations thereof. In some embodiments, thedevices are integrated circuit devices. The devices are, for example,transistors, capacitors, resistors, diodes, photodiodes, fuse devices,or the like, or combinations thereof.

In some embodiments, an interconnection structure and a dielectricstructure are formed over the substrate 13. The interconnectionstructure is formed in the dielectric structure and connected todifferent devices to form a functional circuit. In some embodiments, thedielectric structure includes an inter-layer dielectric layer (ILD) andone or more inter-metal dielectric layers (IMD). In some embodiments,the interconnection structure includes multiple layers of metal linesand plugs (not shown). The metal lines and plugs include conductivematerials, such as metal, metal alloy or a combination thereof. Forexample, the conductive material may include tungsten (W), copper (Cu),copper alloys, aluminum (Al), aluminum alloys, or combinations thereof.The plugs include contact plugs and via plugs. The contact plugs arelocated in the ILD to be connected to the metal lines and the devices.The via plugs are located in the IMD to be connected to the metal linesin different layers.

The pads 14 may be or electrically connected to a top conductive featureof the interconnection structure, and further electrically connected tothe devices formed on the substrate 13 through the interconnectionstructure. The material of the pads 14 may include metal or metal alloy,such as aluminum, copper, nickel, or alloys thereof.

The passivation layer 15 is formed over the substrate 13 and covers aportion of the pads 14. A portion of the pads 14 is exposed by thepassivation layer 15 and serves as an external connection of the die 18.The connectors 16 are formed on and electrically connected to the pads14 not covered by the passivation layer 15. The connectors 16 includessolder bumps, gold bumps, copper bumps, copper posts, copper pillars, orthe like, or combinations thereof. The passivation layer 17 is formedover the passivation layer 15 and laterally aside the connectors 16 tocover the sidewalls of the connectors 16. The passivation layers 15 and17 respectively include an insulating material such as silicon oxide,silicon nitride, polymer, or a combination thereof. The polymer mayinclude polybenzoxazole (PBO), polyimide (PI), benzocyclobutene (BCB),the like, or combinations thereof. The materials of the passivationlayer 15 and the passivation layer 17 may be the same or different. Insome embodiments, the top surface of the passivation layer 17 and thetop surfaces of the connectors 16 are substantially coplanar with eachother.

Referring to FIG. 1B, an encapsulant 19 is formed over the carrier 10 tolaterally encapsulate sidewalls of the dies 18. In some embodiments, theencapsulant 19 includes a molding compound, a molding underfill, a resinsuch as epoxy, a combination thereof, or the like. In some otherembodiments, the encapsulant 19 includes a photo-sensitive material suchas polybenzoxazole (PBO), polyimide (PI), benzocyclobutene (BCB), acombination thereof, or the like, which may be easily patterned byexposure and development processes or laser drilling process. Inalternative embodiments, the encapsulant 19 includes nitride such assilicon nitride, oxide such as silicon oxide, phosphosilicate glass(PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass(BPSG), a combination thereof, or the like.

In some exemplary embodiments, the encapsulant 19 is a molding compoundwhich is a composite material including a base material 20 and aplurality of fillers 21 in the base material 20. In some embodiments,the encapsulant 19 may further include additives, such as hardener. Thebase material 20 may include resins, such as epoxy resins, phenolicresins or silicon-containing resins, or anhydride and amine resins orthe like or combinations thereof. The fillers 21 may include a singleelement, a compound such as nitride, oxide, or a combination thereof.The fillers 21 may include silicon oxide, aluminum oxide, boron nitride,alumina, silica, or the like, for example. In some embodiments, thefillers 21 are spherical particles, or the like. The cross-section shapeof the filler 21 may be circle, oval, or any other shape. In someembodiments, the fillers 21 include solid fillers, such as theillustrated fillers 21 a, but the disclosure is not limited thereto. Insome embodiments, a small portion of the fillers 21 may be hollowfillers, such as the fillers 21 b shown in FIG. 1B.

In some embodiments, the filler size and filler content of theencapsulant 19 are controlled in a suitable range, and suitable basematerial and additives are selected to form the encapsulant 19, suchthat the encapsulant 19 has a good property to provide the encapsulationof the dies 18. For example, the filler size (e.g. diameter D1), such asthe maximum filler size of the filler 21 may be in the range of 10 μm to25 μm or 10 μm to 30 μm. The average filler size (e.g. diameter D1) ofthe filler 21 may be in the range of 5 μm to 15 μm. In some embodiments,based on the total weight of the encapsulant 19, the content of thefillers 21 in the encapsulant 19 is larger than 80 wt %, such as 80 wt %to 90 wt % or more. The thermal expansion coefficient (CTE) of theencapsulant 19 is 5 ppm/° C. to 15 ppm/° C. in a temperature range underglass transition temperature (Tg), and 25 ppm/° C. to 50 ppm/° C. in atemperature range higher than Tg, for example. The viscosity of theencapsulant 19 ranges from 80 Pa·s to 300 Pa·s at room temperature, andgreater than 1 Pa·s at a temperature range of 50° C. to 100° C. Herein,the viscosity of the encapsulant refers to the viscosity of theencapsulant material used to form the encapsulant before the encapsulantmaterial is cured. The Young's Modulus of the encapsulant 19 ranges from15 Gpa to 30 Gpa at room temperature.

In some embodiments, the encapsulant 19 is formed by the followingprocesses: an encapsulant material layer is formed over the carrier 10by an over-molding process, so as to encapsulate sidewalls and topsurfaces of the dies 18. A curing process is then performed to cure theencapsulant material layer. Thereafter, a planarization process isperformed to remove a portion of the encapsulant material layer over thetop surfaces of the dies 18, such that the connectors 16 of the dies 18are exposed. The planarization process may include a grinding process, apolishing process such as a chemical mechanical polishing (CMP) process,or a combination thereof. In some embodiments, the top surface of theencapsulant 19 is substantially coplanar with the top surfaces (that is,active surfaces) of the dies 18.

Referring to FIG. 1C, a dielectric layer 25 is then formed on theencapsulant 19 and the dies 18, so as to cover the top surfaces of thedies 18 and the top surface of the encapsulant 19. The dielectric layer25 may be a single layer or a multilayer structure. The material of thedielectric layer 25 includes an inorganic dielectric material, anorganic dielectric material, or a combination thereof. The inorganicdielectric material is, for example, silicon oxide, silicon nitride,silicon oxynitride, or a combination thereof. The organic dielectricmaterial includes polymer. The polymer includes a photosensitivematerial, a non-photosensitive material, or a combination thereof. Insome embodiments, the photosensitive material includes photosensitivepolybenzoxazole (PBO), polyimide (PI), benzocyclobutene (BCB), acombination thereof, and/or the like. The non-photosensitive materialincludes Ajinomoto buildup film (ABF). The dielectric layer 20 may beformed by chemical vapor deposition, spin coating, lamination, or thelike, or a combination thereof.

Referring to FIG. 1D, the dielectric layer 25 is patterned to form aplurality of openings OP1 and OP2 therein by photolithograph and etchingprocesses or laser processes. The openings OP1 and OP2 respectivelyexpose a portion of the top surface of a corresponding connector 16 ofthe die 18. The sizes of the openings OP1 and OP2 may be the same as ordifferent from each other. In some embodiments, the size of the openingOP1 is less than the size of the opening OP2. However, the disclosure isnot limited thereto.

Referring to FIG. 1E, a plurality of conductive pads 27 and 28 areformed on the connectors 16 exposed by the openings OP1 and OP2 of thedielectric layer 25. For example, the conductive pads 27 are formed onthe dielectric layer 25 and fills into the openings OP1 to be inphysical and electrical contact with the connectors 16 of the dies 18.The conductive pads 28 are formed on the dielectric layer 25 and fillsinto the openings OP2 to be in physical and electrical contact with theconnectors 16 of the dies 18. In other words, the conductive pads 27 and28 penetrate through the dielectric layer 25 to electrically connect tothe connectors 16 of the dies 18. In some embodiments, the conductivepads 27 and 28 include conductive materials. The conductive materialsinclude metal such as copper, nickel, titanium, a combination thereof orthe like. In some embodiments, the conductive pads 27 and 28 mayrespectively include a seed layer (not shown) and a metal layer formedthereon (not shown). The seed layer may be a metal seed layer such as acopper seed layer. In some embodiments, the seed layer includes a firstmetal layer such as a titanium layer and a second metal layer such as acopper layer over the first metal layer. The metal layer may be copperor other suitable metals.

In some embodiments, the conductive pads 27 and 28 may be formed by thefollowing processes: after the openings OP1 and OP2 are formed in thedielectric layer 25, a seed material layer is formed on the dielectriclayer 25 to cover the top surface of the dielectric layer 25 and linesthe surface of the openings OP1 and OP2 through, for example, a physicalvapor deposition process such as a sputtering process. A patterned masklayer is then formed on the seed material layer, the patterned masklayer has a plurality of openings exposing the seed material layer inthe openings OP1 and OP2 and a portion of the seed material layer on thetop surface of the dielectric layer 25. Thereafter, a conductive layeris formed on the seed material layer exposed by the patterned masklayer. Afterwards, the patterned mask layer is removed by a suitableprocess such as an ashing process, the seed material layer previouslycovered by the patterned mask layer is removed by an etching processwith the conductive layer as an etching mask, and the seed layerunderlying the conductive layer is remained. As such, the conductivelayer and the underlying seed layer form the conductive pads 27 and 28.

Referring to FIG. 1F, a plurality of conductive posts 30 are formed onand electrically connected to the conductive pads 28. In someembodiments, the conductive posts 30 will be encapsulated by andpenetrate through an encapsulant formed in subsequent processes, andtherefore, the conductive posts 30 may be referred to as a throughintegrated fan-out vias (TIVs) 30. The TIVs 30 include conductivematerials such as copper, nickel, solder, alloys thereof, or the like,or a combination thereof. In some embodiments, the TIV 30 includes aseed layer (not shown) and a metal layer formed thereon (not shown). Theseed layer may be a metal seed layer such as a copper seed layer. Insome embodiments, the seed layer includes a first metal layer such as atitanium layer and a second metal layer such as a copper layer over thefirst metal layer. The metal layer may be copper or other suitablemetals.

Still referring to FIG. 1F, in some embodiments, a bridge die 36 iselectrically bonded to the conductive pads 27, and further electricallyconnected to the connectors 16 of the dies 18 through the conductivepads 27, such that some connectors 16 of the dies 18 are electricallyconnected to each other through the bridge die 36. In some embodiments,the bridge die 36 is bonded to the conductive pads 27 through aplurality of connectors 31, such as solder bumps, gold bumps, copperbumps, or the like or any other suitable metallic balls.

In some embodiments, the bridge die 36 include a substrate 33, aninterconnection structure 34 and a plurality of pads 35 over thesubstrate 33. The substrate 33 may include materials the same as ordifferent from those of the substrate 13 of the die 18. In someembodiments, the substrate 33 may be a semiconductor substrate, apolymer substrate, a dielectric substrate, a ceramic substrate, thelike, or a combination thereof. The semiconductor substrate is, forexample, a doped silicon substrate, an undoped silicon substrate or asemiconductor-on-insulator (SOI) substrate. The doped silicon substratemay be P-type doped, N-type doped, or a combination thereof.

The interconnection structure 34 includes conductive features embeddedin one or more dielectric layers. The conductive features include one ormore layers of metal lines and conductive vias interconnected to eachother. The pads 35 are electrically connected to the conductive featuresof the interconnection structure 34 and serve as an external connectionof the bridge die 36. The pads 35 are electrically connected to thebonding pads 27 through the connectors 31 therebetween. The materials ofthe pads 35 and the conductive features of the interconnection structure34 may respectively include metal, metal compound, metal alloy or acombination thereof, such as copper, aluminum, tantalum, tungsten,tantalum nitride, titanium nitride, alloys of tungsten, titanium orcobalt or an alloy made of nickel and polysilicon or a copper-aluminumalloy, the like or combinations thereof.

In some embodiments, the bridge die 36 may further include activedevices, passive devices or a combination thereof. The active devicesinclude transistors and/or diodes, for example. The passive devices mayinclude capacitors, resistors, inductors, and/or the like. However, thedisclosure is not limited thereto. The bridge die 36 may include anykind of devices, as long as the bridge die 36 electrically connect thedies 18 to each other. In some embodiments, no active or passive devicesare included in the bridge die 36, and the bridge die 36 is a blank chipwithout any other function except for providing the electricalconnection between the dies 18. In some embodiments, one bridge die 36corresponds to two dies 18. For example, a plurality of bridge dies 36may be disposed over the carrier 10, and each bridge die 36corresponding to two dies 18. However, the disclosure is not limitedthereto. It is understood that, the number of the dies 18 and the bridgedie 36 shown in the figures are merely for exemplary illustration, andthe disclosure is not limited thereto.

Still referring to FIG. 1F, in some embodiments, a bridge die 36 isbonded to the dies 18 before the subsequent encapsulation process, thebridge die 36 may be thick, and the sufficient thickness of the bridgedie 36 may help to avoid warpage issue. For example, the height (i.e.thickness) H2 of the bridge die 36 may range from 100 μm to 775 μm or300 μm to 775 μm. As illustrated in FIG. 1F, a space 38 is formedbetween the bottom surface of the bridge die 36 and the top surface ofthe dielectric layer 25. In some embodiments, the space 38 is a relativenarrow small space. For example, the height H3 of the space 38 may rangefrom 5 μm to 80 μm or less. In some embodiments, the connectors 31 arearranged in an array and spaced from each other within the space 38.

Referring to FIG. 1G, in some embodiments, an encapsulant material layer40′ is formed on the dielectric layer 25 by a dispensing process and acuring process. For example, a dispensing head 39 of a dispenser machineis placed over the carrier 10, and an encapsulant material 40″ isdispensed onto the dielectric layer 25 in liquid form by the dispensinghead 39, the encapsulant material 40″ flows and spreads over thedielectric layer 25, and further flows into the space 38 underneath thebridge die 36 and around the connector 31 through capillary action. Insome embodiments, the encapsulant material 40″ includes a base materialand a plurality of fillers in the base material, the base material is inliquid form, and the fillers are in solid form dispersed in the liquidbase material, and the base material carries the fillers to flow overthe dielectric layer 25. In some embodiments, the dispensing head 39moves over the carrier 10 to dispense the encapsulant material 40″ intodifferent regions over the dielectric layer 25. In some embodiments, thedispensing head 39 moves along a single direction to avoid forming voidin the resulted encapsulant material layer 40′. After the dispensingprocess is performed, a curing process is performed to cure theencapsulant material 40″, so as to form the encapsulant material layer40′. In some embodiments, the curing process is performed by at atemperature elevated from a lower temperature to a temperature range of150° C. to 220° C. for about one or two hours. In some embodiments, aplasma treatment is further performed prior to the dispensing process,so as to clean the regions where the encapsulant material 40″ will bedispensed.

In some embodiments, the encapsulant material layer 40′ encapsulatessidewalls and top surfaces of the conductive pads 28, sidewalls and topsurfaces of the TIVs 30, sidewalls of the bridge die 36 and fills intothe space 38 between the bridge die 36 and the dielectric layer 25. Insome embodiments, the encapsulant material layer 40′ is formed to have atop surface higher than the top surface of the TIVs 30 and lower thanthe top surface of the die 36. For example, the top surfaces of the TIVs30 are covered by the encapsulant material layer 40′, while the topsurface of the die 36 may be not covered by the encapsulant materiallayer 40′ and exposed. The sidewalls of the die 36 may be completelycovered by the encapsulant material layer 40′. However, the disclosureis not limited thereto. In some alternative embodiments, the encapsulantmaterial layer 40′ may cover a portion (e.g. lower portion and/or middleportion) of the sidewall of the bridge die 36, and the upper portionand/or the middle portion of the sidewall of the bridge die 36 may beexposed by the encapsulant material layer 40′. The top surface of theTIV 30 may also be exposed by the encapsulant material layer 40′. Insome embodiments, as shown in FIG. 1G, the encapsulant material layer40′ formed by dispensing process has a non-flat surface, and the exposedupper surface of the encapsulant layer 40′ may be separated by thebridge die 36, that is, the exposed upper surface encapsulant materiallayer 40′ is non-continuous.

In some embodiments, the thick bridge die 36 will be thinned in thesubsequent process, and the height of the encapsulant material layer 40′can be controlled by the dispensing amount of the encapsulant material40, therefore, it may be not necessary to make the encapsulant materiallayer 40′ completely encapsulate sidewalls and top surfaces of thebridge die 36. Through dispensing process, the encapsulant materiallayer 40′ may be formed with a smaller size (e.g. thickness, volume)than an encapsulant material formed by over-molding process, therebysaving the cost for the encapsulant material as well as the cost for thesubsequent planarization process.

For example, as illustrated in FIG. 1G, the encapsulant material layer40′ may have a body portion BP and an extension portion EP. Thethickness (i.e. height) H5 of the body portion BP of the encapsulantmaterial layer 40′ may range from 10 μm to 200 μm such as 80 μm. The topsurface of the body portion BP is lower than the top surface of thebridge die 36 and may be higher than the top surface of the TIVs 30. Theextension portion EP is located on the top surface of the body portionBP and on sidewalls of the bridge die 36. In some embodiments, theextension portion EP is formed by the encapsulant material extending upalong the sidewalls of the bridge die 36 through capillary force duringthe dispensing process. The extension portion EP may extend up to thetop of the bridge die 36 to cover the sidewalls of the bridge die36 andhave a top surface substantially coplanar with the top surface of thebridge die 36, that is, the encapsulant material layer 40′ maycompletely cover the sidewalls of the bridge die 36. In some otherembodiments, the extension portion EP may extend to a level height lowerthan the top surface of the bridge die 36, that is, the encapsulantmaterial layer 40′ may partially cover the sidewalls of the bridge die36. The lateral thickness (i.e. width) of the extension portion EP maybe non-uniform, such as decreased from bottom to top, and is much lessthan the width of the body portion BP. In other words, the encapsulantmaterial layer 40′ has recesses RC on the body portion BP and laterallyaside the extension portion EP.

Referring to FIG. 1G to FIG. 1H, a planarization process is performed toplanarize the top surfaces of the bridge die 36, the TIVs 30 and theencapsulant material layer 40′, such that the top surfaces of the TIVs30 are exposed, and an encapsulant 40 laterally encapsulating sidewallsof the bridge die 36 and the TIVs 30 is formed. The planarizationprocess may include a grinding process, a chemical mechanical polishing(CMP) process or a combination thereof. In some embodiments, theplanarization process removes a portion of the encapsulant materiallayer 40′ and/or a portion of the die 36 and/or portions of the TIVs 30.In some embodiments, the extending portion EP and a portion of the bodyportion BP of the encapsulant material layer 40′, the bridge die 36covered by the extending portion EP and a portion of the bridge die 36covered by the body portion BP and/or portions of the TIVs 30 areremoved during the planarization process. In some embodiments, after theplanarization process is performed, the top surface of the encapsulant40, the top surfaces of the TIVs 30 and the top surface of the bridgedie 36 are substantially coplanar with each other.

In other words, the bridge die 36 is thinned by the planarizationprocess and has a reduced thickness. For example, the thinned bridge die36 may have a height H2′ ranging from 5 μm to 100 μm.

Referring to FIG. 1H, as such, an encapsulated semiconductor device isthus formed on the carrier 10. Specifically, a first encapsulatedsemiconductor device EN1 and a second encapsulated semiconductor deviceEN2 are formed on the carrier 10, and the dielectric layer 25 issandwiched between the first encapsulated semiconductor device EN1 andthe second encapsulated semiconductor device EN2. The first encapsulatedsemiconductor device EN1 includes the dies 18 encapsulated by theencapsulant 19. The second encapsulated semiconductor device EN2includes the bridge die 36, the connectors 31 and the TIVs 30encapsulated by the encapsulant 40.

In some embodiments, the material of the encapsulant 40 is differentfrom the material of the encapsulant 19. The material of the encapsulant40 may be referend to as molding underfill or underfill moldingmaterial. In some embodiments, different base material, different fillersize and content and/or different additives may be used to form theencapsulant 40, such that the encapsulant 40 has a suitable property toprovide the encapsulation for the bridge die 36 and/or the TIVs 30. Forexample, the encapsulant 40 includes a base material 41 and a pluralityof fillers 42. The base material 41 may be resins, such as epoxy resins,phenolic resins or silicon-containing resins, anhydride/amine resin orthe like. In some embodiments, the base material 41 of the encapsulant40 and the base material 20 of the encapsulant 19 include differenttypes of resins. For example, the base material 41 and the base material20 may include resins having different types of anhydride/amine/phenol.Further, the encapsulant 40 and the encapsulant 19 may include differentresin additives. The filler size and filler loading (density) of theencapsulant 40 may also be different from those of the encapsulant 19,such that the encapsulant 40 has different properties (e.g. CTE, Young'smodulus, Tg, viscosity) than the encapsulant 19, the propertydifferences will be described in detail below. The fillers 42 mayinclude a single element, a compound such as nitride, oxide, or acombination thereof. The fillers 42 may include silicon oxide, aluminumoxide, boron nitride, alumina, silica, or the like, for example. Thefiller 42 may include solid fillers, hollow fillers, or a combinationthereof. The shapes of the fillers 42 may be similar to those of thefillers 21. In some embodiments, the sizes and the content of thefillers 42 included in the encapsulant 40 are different from the sizesand the content of the fillers 21 included in the encapsulant 19. Insome embodiments, suitable base material 41 are selected, and the sizesand the content of the fillers 42 are controlled within a suitablerange, such that the encapsulant has a suitable physical property (suchas, CTE, viscosity, Young's modulus).

In some embodiments, the filler size of the filler 42 is less than thefiller size of the filler 19, and the average filler size of the fillers42 is less than the average filler size of the fillers 21. The contentof the fillers 42 in the encapsulant 40 is less than the content of thefillers 21 in the encapsulant 19. For example, the filler size (e.g.diameter), such as the maximum filler size of the filler 42 may be lessthan 10 μm. The average filler size (e.g. diameter) of the filler 42 maybe in the range of 0.5 μm to 3 μm. In some embodiments, based on thetotal weight of the encapsulant 40, the content of the fillers 42 in theencapsulant 40 is about 60 wt % to 82 wt %. The filler size of thefillers 42 is selected to be at least less than the height H3 of thespace 38, such that the fillers 42 can enter into the space 38 betweenthe bridge die 36 and the dielectric layer 25. The filler content of thefillers 42 is controlled in the suitable range such that the encapsulantmaterial 40″ (FIG. 1G) has a suitable viscosity and sufficient fluidityto flow into the space 38 and also can stand without collapse. In someembodiments, the encapsulant 40 has a relative small thickness H5′, suchas 5 μm to 60 μm or thicker and the filler content of the fillers 42 maybe relative small to reduce the viscosity of the encapsulant material40″, so as to guarantee the encapsulant material 40″ has a sufficientfluidity, such that the base material 41 can carry the fillers 42 toflow into the space 38. In some embodiments, the viscosity of theencapsulant 40 is less than the viscosity of the encapsulant 19. Forexample, the viscosity of the encapsulant 40 ranges from 1 Pa·s to 80Pa·s at room temperature, and less than 1 Pa·s at a temperature range of50° C. to 100° C. Herein, the viscosity of the encapsulant refers to theviscosity of the encapsulant material used to form the encapsulantbefore the encapsulant material is cured.

In some embodiments, the CTE of the encapsulant 40 may be the same as orlarger than the CTE of the encapsulant 19. For example, the CTE of theencapsulant 19 is 5 ppm/° C. to 30 ppm/° C. in a temperature range underglass transition temperature (Tg), and 25 ppm/° C. to 80 ppm/° C. in atemperature range higher than Tg. That is, there may exist a CTEmismatch between the encapsulant 40 and the encapsulant 19, or betweenthe encapsulated semiconductor device EN2 and the encapsulatedsemiconductor device ENI. In some embodiments, the Young's modulus ofthe encapsulant 40 is less than the Young's modulus of the encapsulant19. For example, the Young's Modulus of the encapsulant 40 ranges from 5Gpa to 15 Gpa at room temperature. In the embodiments in which CTEmismatch exists between the encapsulated semiconductor device EN2 andthe encapsulated semiconductor device EN1 (CTE of the encapsulatedsemiconductor device EN2 larger than the encapsulated semiconductordevice EN1), the relative small Young's Modulus of the encapsulant 40can help to reduce the warpage of the resulted package structure.

Still referring to FIG. 1H, the encapsulant 40 includes an under fillingportion 40 a and a lateral portion 40 b connected to each other. Theunder filling portion 40 a fills the space 38 under the bridge die 36,and between the bridge die 36 and the dielectric layer 25, and laterallysurrounds the connectors 31. The lateral portion 40 b is laterally asidethe under filling portion 40 a and the bridge die 36, and surroundingthe TIVs 30. Since the encapsulant 40 including the under fillingportion 40 a and the lateral portion 40 b is formed in a singleencapsulation process, there is free of interface between the underfilling portion 40 a and the lateral portion 40 b, and there is free ofinterface in the encapsulant 40. In some embodiments, the fillers 42 issubstantially uniformly distributed throughout the encapsulant 40. Inother words, the filler size (e.g. average size) and the filler contentof the fillers 42 included in the under filling portion 40 a issubstantially the same as the filler size (e.g. average size) and thefiller content of the fillers 42 included in the lateral portion 40 b.In some embodiments, the under filling portion 40 a and the lateralportion 40 b share at least one fillers 42 (i.e. common filler), thatis, at least one fillers 42 is located at both of the under fillingportion 40 a and the lateral portion 40 b, but the disclosure is notlimited thereto. In some embodiments, the components in the encapsulatedsemiconductor device EN2, such as the conductive pads 28 and the TIVs 30around the bridge die 36 are completely encapsulated by and in contactwith the encapsulant 40.

Referring to FIG. 2, in some embodiments, during the dispensing processfor forming the encapsulant 40, the base material 41 carry the fillers42 to flow into the space 38 to fill the gaps between the connectors 31,thereby forming a flow mark 45 in the resulted encapsulant 40. In someembodiments, the flow mark 45 is formed under the bridge die 36 wherethe connectors 31 are present, and the flow mark is not present at theposition directly over the gap between the dies 18. FIG. 2 schematicallyillustrate a plurality of bridge dies 36 over the carrier 10 and flowmarks 45 formed under different bridge dies 36. It is noted that, thenumber of the bridge dies 36 shown in FIG. 2 is merely for illustration,and the disclosure is not limited thereto. As shown in FIG. 2, in someembodiments, through dispensing process, the flow marks 45 of theencapsulant 40 under different bridge dies 36 in different region overthe carrier 10 are substantially the same and extend towardsubstantially the same direction D1. In some embodiments, the image ofthe flow marks 45 may be obtained by a C-mode scanning acousticmicroscope (C-SAM). For example, an electrical pulse signal is generatedby a transmitter and pulser of the C-SAM, the electrical pulse signal isthen transmitted into lead zirconate titanate (PZT) material of atransducer. An acoustic wave such as an ultrasound wave (mechanicalwave) is generated through the vibration of the PZT material, and theacoustic wave penetrates into the target to be detected (which is theunder filling portion 40 a in the present embodiment), and a reflectivesignal is generated from the target and transmitted to an amplifier andthen calculated and rebuilt to form the image of the target. In thepresent embodiments, the acoustic wave may be focus within the underfilling portion 40 a in any depth.

Referring back to FIG. 1H and FIG. 1I, in some embodiments, after theencapsulant 40 is formed, a redistribution layer (RDL) structure 50 isformed on the encapsulated semiconductor device EN2. In someembodiments, the RDL structure 50 includes a plurality of polymer layersPM1, PM2 and PM3 and a plurality of redistribution layers RDL1, RDL2 andRDL3 stacked alternately. The number of the polymer layers or theredistribution layers shown in FIG. 1I is merely for illustration, andthe disclosure is not limited thereto. In some embodiments, more or lesslayers of polymer layers and redistribution layers are included in theRDL structure 50.

The redistribution layer RDL1 penetrates through the polymer layer PM1and is electrically connected to the TIVs 30 and/or the bridge die 36.The redistribution layer RDL2 penetrates through the polymer layer PM2and is electrically connected to the redistribution layer RDL1. Theredistribution layer RDL3 penetrates through the polymer layer PM3 toelectrically connect to the redistribution layer RDL2.

In some embodiments, the material of the polymer layer PM1, PM2, PM3 mayrespectively include polybenzoxazole (PBO), polyimide (PI),benzocyclobutene (BCB), a combination thereof or the like. Theredistribution layers RDL1, RDL2, RDL3 respectively include conductivematerials. The conductive materials include metal such as copper,nickel, titanium, a combination thereof or the like. In someembodiments, the redistribution layers RDL1, RDL2, RDL3 respectivelyincludes a seed layer (not shown) and a metal layer formed thereon (notshown). The seed layer may be a metal seed layer such as a copper seedlayer. In some embodiments, the seed layer includes a first metal layersuch as a titanium layer and a second metal layer such as a copper layerover the first metal layer. The metal layer may be copper or othersuitable metals.

In some embodiments, the redistribution layers RDL1 and RDL2respectively includes vias V and traces T connected to each other. Thevias V of the redistribution layer RDL1 penetrates through the polymerlayer PM1 to connect the traces T to the TIVs 30. The vias V of theredistribution layer RDL2 penetrates through the polymer layer PM2, toconnect the traces T of the redistribution layers RDL2 and RDL1. Thetraces T are respectively located on the polymer layers PM1 or PM2, andare respectively extending on the top surface of the polymer layers PM1or PM2. The sidewalls of the vias V and the traces T may be straight orinclined. In some embodiments, the via V has inclined sidewall and istapered toward the encapsulated semiconductor device EN2.

Still referring to FIG. 1I, in some embodiments, the redistributionlayer RDL3 is the topmost redistribution layer of the RDL structure 36,and may be referred to as under-ball metallurgy (UBM) layer for ballmounting. A plurality of connectors 52 are formed over and electricallyconnected to the redistribution layer RDL3 of the RDL structure 50. Insome embodiments, the connectors 52 are referred to as conductiveterminals. In some embodiments, the connectors 52 may be ball grid array(BGA) connectors, solder balls, controlled collapse chip connection (C4)bumps, or a combination thereof. In some embodiments, the material ofthe connector 52 includes copper, aluminum, lead-free alloys (e.g.,gold, tin, silver, aluminum, or copper alloys) or lead alloys (e.g.,lead-tin alloys). The connector 52 may be formed by a suitable processsuch as evaporation, plating, ball dropping, screen printing and reflowprocess, a ball mounting process or a C4 process. In some embodiments,metal posts or metal pillars (not shown) may further be formed betweenthe redistribution layer RDL2 and the connectors 38, but the disclosureis not limited thereto. The connectors 52 are electrically connected tothe TIVs 30 through the RDL structure 50, and further electricallyconnected to the dies 18 through the TIVs 30. The dies 18 areinterconnected to each other through the bridge die 36 and the RDLstructure 50.

Referring to FIG. 1I and FIG. 1J, the de-bonding layer 11 is decomposedunder the heat of light, and the carrier 10 is then released from theoverlying structure. In some embodiments, thereafter, a singulationprocess is performed to separate the package structures, and a pluralityof singulated package structure as shown in FIG. 1J are formed.

Referring to FIG. 1J, a package structure 100 a is thus completed. Thepackage structure include the encapsulated semiconductor device EN1, thedielectric layer 25, the conductive pads 27 and 28, the encapsulatedsemiconductor device EN2, the RDL structure 50 and the conductiveterminals 52. The bridge die 36 and the RDL structure 50 provide theelectrical connection between the dies 18. For example, some of theconnectors 16 of the dies 18 are connected to each other through thebridge die 36, and some other connectors 16 of the dies 18 are connectedto each other through the TIVs 30 and RDL structure 50. Although twoTIVs 30 are illustrated, the disclosure is not limited thereto. MoreTIVs 30 may be included in the package structure 100 a. In someembodiments, except for the connectors 16 connected to bridge die 36,some or all of the other connectors 16 of the die 18 may be connected tocorresponding TIVs 30. In the embodiments of the disclosure, since someof the connectors of the dies are connected through the bridge die, thenumber of the layers of the redistribution layers and the pitch of thetraces T of the RDLs of the RDL structure may be reduced. In someembodiments, the pitch of the traces of the RDL structure 50 is largerthan the pitch of the metal lines included in the interconnectionstructure of the bridge die 36.

In the package structure 100 a, the substrate 33 of the bridge die 36 isin physical contact with the polymer layer PM1 of the RDL structure 50,and there may be free of direct electrical connection between theredistribution layer RDL1 and the bridge die 36, but the disclosure isnot limited thereto.

Referring to FIG. 3, a package structure 100 b is illustrated. Thepackage structure 100 b is similar to the package structure 100 a,except that the bridge die 36 further includes a plurality of throughsubstrate vias (TSVs) 60 disposed in the substrate 33 of the bridge die36. The material of the TSVs 60 may be similar to those of the metalfeatures included in the interconnection structure 34. The TSVs 60 areelectrically connected to the interconnection structure 34. In someembodiments, the TSVs 60 are embedded in the substrate 33, and may beexposed by the planarization process illustrated in FIG. 1H. In someembodiments, in the package structure 100 b, the top surfaces of theTSVs 60 are substantially coplanar with the top surface of the substrate33 and the top surfaces of the TIVs 30 and the encapsulant 40. Theredistribution layer RDL1 further includes vias landing on the TSVs 60.That is, the redistribution layer RDL1 is in physical and electricalcontact with the TSVs 60. The other features of the package structure100 b are substantially the same as those of the package structure 100a, which are not described again here.

FIG. 4 illustrates a package structure 100 c according to some otherembodiments of the disclosure. The package structure 100 c is similar tothe package structure 100 a, except that the package structure 100 c isfree of the conductive pads 27 and 28.

Referring to FIG. 4, in some embodiments, the TIVs 30 and the connectors31 penetrate through the dielectric layer 25 to connect to theconnectors 16 of the dies 18. For example, after the openings OP1 andOP2 are formed in the dielectric layer 25 (FIG. 1D), the process offorming the conductive pads 27 and 28 (FIG. 1E) is skipped. The TIVs 30fills in the openings OP2 to be in electrical and physical contact withthe connectors 16 of the die 18, so as to provide the electricalconnection between the dies 18 and the subsequently formed RDL structure50. The connectors 31 fills in the openings OP1 to be in electrical andphysical contact with the connectors 16 of the die 18, so as to providethe electrical connection between the bridge die 36 and the dies 18. Theother features of the package structure 100 c are substantially similarto those of the package structure 100a. It is understood that the bridgedie 36 of the package structure 100 c may also include the TSV shown inFIG. 3.

In the embodiments of the disclosure, the encapsulant encapsulating thebridge die is formed of a single material and formed by a singleencapsulation process. Therefore, the process steps are reduced, and theprocess flow is relative simplified, thereby saving the cost andimproving the yield. In addition, since single material is used tosevers as the under filling portion and the lateral portion of theencapsulant, there is no need to set the keep out zone around the die,and the corresponding issue is avoided accordingly.

In accordance with some embodiments of the disclosure, a packagestructure including a first die, a second die, a first encapsulant, abridge die, and a second encapsulant are provided. The first encapsulantlaterally encapsulates the first die and the second die. The bridge dieis electrically connected to the first die and the second die. Thesecond encapsulant is located over the first die, the second die and thefirst encapsulant, laterally encapsulating the bridge die and filling aspace between the bridge die and the first die, between the bridge dieand the first encapsulant and between the bridge die and the second die.A material of the second encapsulant is different from a material of thefirst encapsulant.

In accordance with alternative embodiments of the disclosure, a packagestructure including a first die, a second die, a first encapsulant, adielectric layer, a bridge die and a second encapsulant is provided. Thefirst encapsulant laterally encapsulates the first die and the seconddie. The dielectric layer covers top surfaces of the first die, thesecond die and the first encapsulant. The bridge die is located over thedielectric layer and electrically connected to the first die and thesecond die through a plurality of connectors. The second encapsulant islocated on the dielectric layer, encapsulating the bridge die and theplurality of connectors. The second encapsulant includes an underfilling portion disposed between the bridge die and the dielectriclayer, and a lateral portion laterally aside the bridge die and theunder filling portion, there is free of interface between the underfilling portion and the lateral portion of the second encapsulant.

In accordance with some embodiments of the disclosure, a method ofmanufacturing a package structure includes the following processes. Afirst die and a second die are provided. A first encapsulant is formedto laterally encapsulate the first die and the second die. A dielectriclayer is formed to cover top surfaces of the first die, the second dieand the first encapsulant. A bridge die is disposed over the dielectriclayer and electrically connected to the first die and the second die. Asecond encapsulant is formed on the dielectric layer to encapsulate thebridge die and the plurality of connectors. The second encapsulantincludes an under filling portion disposed between the bridge die andthe dielectric layer, and a lateral portion laterally aside the bridgedie and the under filling portion, there is free of interface betweenthe under filling portion and the lateral portion of the secondencapsulant.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the disclosure.Those skilled in the art should appreciate that they may readily use thedisclosure as a basis for designing or modifying other processes andstructures for carrying out the same purposes and/or achieving the sameadvantages of the embodiments introduced herein. Those skilled in theart should also realize that such equivalent constructions do not departfrom the spirit and scope of the disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the disclosure.

What is claimed is:
 1. A package structure, comprising: a first die anda second die; a first encapsulant, laterally encapsulating the first dieand the second die; a bridge die, electrically connected to the firstdie and the second die; a second encapsulant over the first die, thesecond die and the first encapsulant, laterally encapsulating the bridgedie and filling a space between the bridge die and the first die,between the bridge die and the first encapsulant and between the bridgedie and the second die; wherein a material of the second encapsulant isdifferent from a material of the first encapsulant.
 2. The packagestructure of claim 1, wherein the first encapsulant comprises a firstbase material and a plurality of first fillers in the first basematerial; the second encapsulant comprises a second base material and aplurality of second fillers in the second base material; wherein anaverage size of the second fillers is less than an average size of thefirst fillers.
 3. The package structure of claim 2, wherein a content ofthe second fillers in the second encapsulant is less than a content ofthe first fillers in the first encapsulant.
 4. The package structure ofclaim 1, wherein a Young's modulus of the second encapsulant is lessthan a Young's modulus of the first encapsulant.
 5. The packagestructure of claim 1, further comprises a dielectric layer sandwichedbetween the second encapsulant and the first encapsulant, between thesecond encapsulant and the first die, and between the second encapsulantand the second die.
 6. The package structure of claim 5, furthercomprises a plurality of conductive pads penetrating through thedielectric layer to connect to the first die and the second die, whereinthe bridge die is electrically bonded to the plurality of conductivepads through a plurality of connectors.
 7. The package structure ofclaim 5, wherein the bridge die is electrically connected to the firstdie and the second die through a plurality of connectors, and theplurality of connectors penetrate through the dielectric layer toconnect to the first die and the second die.
 8. A package structure,comprising: a first die and a second die; a first encapsulant, laterallyencapsulating the first die and the second die; a dielectric layer,covering top surfaces of the first die, the second die and the firstencapsulant; a bridge die over the dielectric layer, electricallyconnected to the first die and the second die through a plurality ofconnectors; a second encapsulant on the dielectric layer, encapsulatingthe bridge die and the plurality of connectors, wherein the secondencapsulant comprises an under filling portion disposed between thebridge die and the dielectric layer, and a lateral portion laterallyaside the bridge die and the under filling portion, there is free ofinterface between the under filling portion and the lateral portion ofthe second encapsulant.
 9. The package structure of claim 8, wherein thefirst encapsulant comprises a first base material and a plurality offirst fillers in the first base material; the second encapsulantcomprises a second base material and a plurality of second fillers inthe second base material; and an average size of the plurality of secondfillers is less than an average size of the plurality of first fillers.10. The package structure of claim 9, wherein a content of the basematerial in the second encapsulant is larger than a content of the basematerial in the first encapsulant.
 11. The package structure of claim 8,wherein a thermal expansion coefficient (CTE) of the second encapsulantis larger than a CTE of the first encapsulant, and a Young's modulus ofthe second encapsulant is less than a Young's modulus of the firstencapsulant.
 12. The package structure of claim 8, further comprises aplurality of conductive pads penetrates through the dielectric layer toelectrically connect to the first die and the second die, and theplurality of connectors are landing on the conductive pads.
 13. Thepackage structure of claim 8, wherein the second encapsulant comprises asecond base material and a plurality of second fillers in the secondbase material, and the under filling portion and the later portion shareat least one second filler of the plurality of second fillers.
 14. Amethod of manufacturing a package structure, comprising: providing afirst die and a second die; forming a first encapsulant to laterallyencapsulate the first die and the second die; forming a dielectric layerto cover top surfaces of the first die, the second die and the firstencapsulant; disposing a bridge die over the dielectric layer andelectrically connecting the bridge die to the first die and the seconddie; forming a second encapsulant on the dielectric layer to encapsulatethe bridge die and the plurality of connectors, wherein the secondencapsulant comprises an under filling portion disposed between thebridge die and the dielectric layer, and a lateral portion laterallyaside the bridge die and the under filling portion, there is free ofinterface between the under filling portion and the lateral portion ofthe second encapsulant.
 15. The method of claim 14, wherein the firstencapsulant is formed of a first encapsulant material, and the secondencapsulant is formed of a second encapsulant material by a formingprocess different from a forming process of the first encapsulant. 16.The method of claim 15, wherein a viscosity of the second encapsulantmaterial is less than a viscosity of the first encapsulant material. 17.The method of claim 14, wherein forming the second encapsulant comprisesforming a second encapsulant material layer on the dielectric layer by adispensing process, wherein a top surface of the second encapsulantmaterial layer is lower than a top surface of the bridge die.
 18. Themethod of claim 17, wherein the second encapsulant material layer has anon-flat surface.
 19. The method of claim 17, further comprisesperforming a planarization process to remove a portion of the bridge dieand a portion of the second encapsulant material layer, and the secondencapsulant is remained, wherein after the planarization process isperformed, a top surface of the second encapsulant is coplanar with atop surface of the bridge die.
 20. The method of claim 14, wherein theunder filling portion and the lateral portion of second encapsulant areformed by a single process.